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Abstract Cuprous oxide ($$\hbox {Cu}{}_2\hbox {O}$$ $\text{Cu}{}_2\text{O}$) has recently emerged as a promising material in solid-state quantum technology, specifically for its excitonic Rydberg states characterized by large principal quantum numbers (n). The significant wavefunction size of these highly-excited states (proportional to$$n^2$$ $n^2$) enables strong long-range dipole-dipole (proportional to$$n^4$$ $n^4$) and van der Waals interactions (proportional to$$n^{11}$$ $n^{11}$). Currently, the highest-lying Rydberg states are found in naturally occurring$$\hbox {Cu}_2\hbox {O}$$ ${\text{Cu}}_2\text{O}$. However, for technological applications, the ability to grow high-quality synthetic samples is essential. The fabrication of thin-film$$\hbox {Cu}{}_2\hbox {O}$$ $\text{Cu}{}_2\text{O}$samples is of particular interest as they hold potential for observing extreme single-photon nonlinearities through the Rydberg blockade. Nevertheless, due to the susceptibility of high-lying states to charged impurities, growing synthetic samples of sufficient quality poses a substantial challenge. This study successfully demonstrates the CMOS-compatible synthesis of a$$\hbox {Cu}{}_2\hbox {O}$$ $\text{Cu}{}_2\text{O}$thin film on a transparent substrate that showcases Rydberg excitons up to$$n = 8$$ $n=8$which is readily suitable for photonic device fabrications. These findings mark a significant advancement towards the realization of scalable and on-chip integrable Rydberg quantum technologies.